Presentation + Paper
4 March 2019 Enhanced power conversion efficiency in 900-nm range single emitter broad stripe laser diodes maintaining high power operability
Author Affiliations +
Proceedings Volume 10900, High-Power Diode Laser Technology XVII; 109000F (2019) https://doi.org/10.1117/12.2509184
Event: SPIE LASE, 2019, San Francisco, California, United States
Abstract
Design optimization of single emitter broad stripe 900-nm laser diodes was experimentally studied to achieve high power conversion efficiency (PCE) for a use in fiber laser systems. We chose two approaches for PCE improvement. The first is an optical confinement factor Γwell optimization which affects threshold current and internal loss. The second is electric resistance minimization to suppress unwanted power consumption causing heat generation. As a result, the newly designed LD successfully demonstrates the high PCE of 72.5 % at middle power range and 66.7 % at practical high power of 20 W.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshikazu Kaifuchi, Kyohei Yoshida, Yuji Yamagata, Ryozaburo Nogawa, Yumi Yamada, and Masayuki Yamaguchi "Enhanced power conversion efficiency in 900-nm range single emitter broad stripe laser diodes maintaining high power operability", Proc. SPIE 10900, High-Power Diode Laser Technology XVII, 109000F (4 March 2019); https://doi.org/10.1117/12.2509184
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Semiconductor lasers

High power lasers

Active optics

Fiber lasers

Laser systems engineering

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